Infrared halogen lamp tube is heated and cooled by air cooling；
PID temperature control of lamp power can accurately control temperature rise to ensure good reproducibility and temperature uniformity；
Adopt parallel gas path inlet to avoid cold spots during annealing；
Two groups of process gases are standard, and can be expanded to up to 6 groups of process gases；
Both atmospheric and vacuum treatment methods can be selected, and the gas is purified before intake.；
The maximum size of a measurable single crystal wafer sample is 12 inches (300*300mm).
Product description
Specification parameters
Hardware options
RTP-SA-12 is a semi-automatic vertical rapid annealing system under protective gas. It uses infrared and visible light to heat a single Wafer or sample. It has short process time and high temperature control accuracy. It is suitable for 4-12-inch wafers. Compared with traditional diffusion furnace annealing systems and other RTP systems, its unique chamber design, advanced temperature control technology and unique RL900 software control system ensure excellent thermal uniformity.
industry application
Ion implantation annealing
Rapid annealing after ITO coating
oxide
nitride growth
Silicide alloy annealing
GaAs process
Ohmic contact fast alloy
Oxidation reflux
Other semiconductor rapid heat treatment processes
