Fully automatic dual-chamber Rapid Thermal ProcessingRTP-DTS-8

RTP-DTS-12 is a dual-chamber fully automatic annealing system under protective gas. It uses infrared and visible light to heat a single Wafer or sample. It has short process time and high temperature control accuracy. It is suitable for 4-12-inch wafers. Compared with traditional diffusion furnace annealing systems and other RTP systems, its unique chamber design, advanced temperature control technology and unique RL900 software control system ensure excellent thermal uniformity. At the same time, the structural design of the dual chamber and the addition of a wafer robot improve work efficiency.

Ion implantation annealing

Rapid annealing after ITO coating

oxide

nitride growth

Silicide alloy annealing

GaAs process

Ohmic contact fast alloy

Oxidation reflux

Other semiconductor rapid heat treatment processes

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Semi-automatic Rapid Thermal ProcessingRTP-SA-12

RTP-SA-12 Short process time, high temperature control accuracy, suitable for 4-12-inch tablets

Desktop type Rapid Thermal ProcessingRTP-Table-6

The temperature can reach 1250℃, and the maximum size of a measurable single crystal wafer sample is 6 inches